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Preliminary HAT2058R Silicon N Channel Power MOS FET High Speed Power Switching Features * * * * * Low on-resistance Capable of 4 V gate drive Low drive current High density mounting "J" is for Automotive application High temperature D-S leakage guarantee Avalanche rating REJ03G1174-0300 Rev.3.00 Aug 25, 2009 Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 78 DD 56 DD 65 87 12 34 2 G 4 G 1, 3 2, 4 5, 6, 7, 8 Source Gate Drain S1 MOS1 S3 MOS2 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. 2. 3. 4. Symbol VDSS VGSS ID Note 2 ID (pulse) Note 1 IDR IAP Note 4 EAR Note 4 Pch Note 2 Pch Note 3 Tch Tstg Value 100 20 4 32 4 -- -- 2 3 150 -55 to +150 Unit V V A A A A mJ W W C C PW 10 s, duty cycle 1% 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s Value at Tch = 25C, Rg 50 REJ03G1174-0300 Rev.3.00 Aug 25, 2009 Page 1 of 7 HAT2058R Preliminary Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 5. Pulse test Symbol V (BR) DSS V (BR) GSS IDSS IGSS VGS (off) |yfs| RDS (on) RDS (on) Ciss Coss Crss td (on) tr td (off) tf VDF trr Min 100 20 -- -- 1.0 3 -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 5 120 150 420 180 100 10 30 110 60 0.85 75 Max -- -- 1 10 2.5 -- 145 180 -- -- -- -- -- -- -- 1.1 -- Unit V V A A V S m m pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VDS = 100 V, VGS = 0 VGS = 16 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 2 A, VDS = 10 V Note 5 ID = 2 A, VGS = 10 V Note 5 ID = 2 A, VGS = 4 V Note 5 VDS = 10 V, VGS = 0 f = 1 MHz VGS = 10 V, ID = 2 A, VDD 30 V IF = 4 A, VGS = 0 Note 5 IF = 4 A, VGS = 0 diF/dt = 50 A/s REJ03G1174-0300 Rev.3.00 Aug 25, 2009 Page 2 of 7 HAT2058R Preliminary Main Characteristics Power vs. Temperature Derating 4.0 100 Test Condition: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s 10 s Maximum Safe Operation Area Pch (W) 30 ID (A) 3.0 10 3 1 10 0 Channel Dissipation D C Drain Current O PW 1 = s m s 2.0 1 Dr ive 1.0 Op er at ion 0 0 50 100 150 200 m tio s n Operation in (P 0.3 W No this area is te 6 10 limited by RDS (on) 0.1 s) Ta = 25C 0.03 1 shot Pulse 1 Drive Operation 0.01 0.1 0.3 1 3 10 30 100 300 1000 pe Ambient Temperature Typical Output Characteristics 20 10 V Pulse Test 10 (A) (A) 2 Dr ive er Op at ion ra 10 Ta (C) Drain to Source Voltage VDS (V) Note 6: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) Typical Transfer Characteristics VDS = 10 V Pulse Test 8 16 6V 4V ID 12 ID 6 Drain Current 8 Drain Current 4 25C Tc = 75C -25C 0 0 1 2 3 4 5 4 VGS = 2 V 0 0 2 4 6 8 10 2 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current VDS (on) (V) Pulse Test 0.8 Drain to Source on State Resistance RDS (on) () 1.0 0.5 0.2 0.1 0.05 VGS = 4 V 10 V Drain to Source Voltage 0.6 ID = 4 A 0.4 2A 0.2 1A 0 0 4 8 12 16 20 0.02 Pulse Test 0.01 0.1 0.2 0.5 1 2 5 10 20 50 Gate to Source Voltage VGS (V) Drain Current ID (A) REJ03G1174-0300 Rev.3.00 Aug 25, 2009 Page 3 of 7 HAT2058R Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test 0.4 4A 0.3 ID = 1 A, 2 A VGS = 4 V 4A 0.1 10 V 0 -40 0 40 80 120 160 1 A, 2 A Preliminary Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) 50 Static Drain to Source on State Resistance RDS (on) () 20 Tc = -25C 10 25C 5 75C 0.2 2 1 0.5 0.1 VDS = 10 V Pulse Test 0.3 1 3 10 30 100 Case Temperature Tc (C) Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage 5000 2000 Body-Drain Diode Reverse Recovery Time Reverse Recovery Time trr (ns) 1000 500 Capacitance C (pF) 1000 500 200 100 50 20 VGS = 0 f = 1 MHz 10 0 10 Coss Crss Ciss 200 100 50 20 10 0.1 di / dt = 50 A / s VGS = 0, Ta = 25C 0.3 1 3 10 30 100 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics VDS (V) ID = 4 A VDD = 80 V 50 V 25 V VDS 80 8 16 VGS Switching Characteristics VGS (V) 20 1000 300 td(off) 100 30 10 3 1 0.1 tf tr td(on) 200 160 Drain to Source Voltage 120 12 40 0 0 8 16 VDD = 80 V 50 V 25 V 24 32 40 4 Gate to Source Voltage Switching Time t (ns) 0 VGS = 10 V, VDD = 30 V PW = 5 s, duty 1 % 0.3 1 3 10 30 100 Gate Charge Qg (nc) Drain Current ID (A) REJ03G1174-0300 Rev.3.00 Aug 25, 2009 Page 4 of 7 HAT2058R Reverse Drain Current vs. Source to Drain Voltage 10 Preliminary Maximum Avalanche Energy vs. Channel Temperature Derating 2.5 IAP = 4 A VDD = 50 V L = 100 H duty < 0.1 % Rg 50 Pulse Test 8 Repetitive Avalanche Energy EAR (mJ) Reverse Drain Current IDR (A) 2.0 6 10 V 4 VGS = 0, -5 V 5V 1.5 1.0 2 0.5 0 0 0.4 0.8 1.2 1.6 2.0 0 25 50 75 100 125 150 Source to Drain Voltage Normalized Transient Thermal Impedance s (t) 10 VSD (V) Channel Temperature Tch (C) Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) 1 D=1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 ch - f (t) = s (t) * ch - f ch - f = 125C/W, Ta = 25C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) lse 0.01 PDM PW T 1m 10 m 100 m 1 10 100 D= 0.001 h 1s PW T ot pu 0.0001 10 100 1000 10000 Pulse Width PW (S) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) Normalized Transient Thermal Impedance s (t) 10 1 D=1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 ch - f (t) = s (t) * ch - f ch - f = 166C/W, Ta = 25C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) e uls 0.01 PDM PW T 1m 10 m 100 m 1 10 100 D= 0.001 1s ho PW T tp 0.0001 10 100 1000 10000 Pulse Width PW (S) REJ03G1174-0300 Rev.3.00 Aug 25, 2009 Page 5 of 7 HAT2058R Avalanche Test Circuit Avalanche Waveform 1 * L * IAP2 * 2 VDSS VDSS - VDD Preliminary VDS Monitor L IAP Monitor EAR = V(BR)DSS IAP VDD ID VDS Rg D.U.T Vin 15 V 50 VDD 0 Switching Time Test Circuit Switching Time Waveform Vin Monitor D.U.T. RL Vout Monitor Vin Vout 10% 10% 90% 10% Vin 10 V 50 VDD = 30 V td(on) 90% tr 90% td(off) tf REJ03G1174-0300 Rev.3.00 Aug 25, 2009 Page 6 of 7 HAT2058R Preliminary Package Dimensions Package Name SOP-8 JEITA Package Code P-SOP8-3.95 x 4.9-1.27 RENESAS Code PRSP0008DD-D Previous Code FP-8DAV MASS[Typ.] 0.085g *1 D F 8 5 *2 E HE bp Index mark 1 Z e 4 * 3 bp xM c Terminal cross section (Ni/Pd/Au plating) NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. Reference Symbol Dimension in Millimeters Min L1 L D E A2 A1 A bp b1 c c1 HE e x y Z L L1 Nom Max 4.90 5.3 3.95 A 0.10 0.14 0.25 1.75 0.34 0.40 0.46 0.15 0.20 0.25 A1 y Detail F 8 0 5.80 6.10 6.20 1.27 0.25 0.1 0.75 0.40 0.60 1.27 1.08 Ordering Information Part Name HAT2058R-EL-E Quantity 2500 pcs Taping Shipping Container REJ03G1174-0300 Rev.3.00 Aug 25, 2009 Page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. 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Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. 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